The High Frequency 2G Power Amplifier IC PA_UHB_E is a board-level RF transmission component responsible for amplifying cellular transmit signals across ultra high band frequencies on compatible iPhone models. This Qualcomm power amplifier plays a critical role in maintaining outbound network communication strength.

Failure of the power amplifier can result in poor call quality, inability to place calls, low signal transmission strength, or network connection instability. Replacement is required where RF diagnostics confirm transmit path failure.

Key Features:

• High Frequency 2G Power Amplifier IC
• Reference: PA_UHB_E
• Qualcomm RF transmit component
• Amplifies outbound cellular signals
• Supports ultra high band frequency transmission
• Board-level replacement part

Common Fault Symptoms:

• Unable to place calls
• Poor outgoing call quality
• Low signal transmission strength
• Dropped calls when dialling
• Network connection instability

Important Installation Notice:

• Professional micro-soldering required
• Logic board removal necessary
• RF diagnostic equipment recommended
• Not suitable for DIY installation

This component is intended for experienced technicians performing advanced RF transmit circuit and baseband repairs.

Compatible with:

• A1863 - iPhone 8
• A1905 - iPhone 8
• A1906 - iPhone 8
• A1864 - iPhone 8 Plus
• A1897 - iPhone 8 Plus
• A1898 - iPhone 8 Plus
• A1865 - iPhone X
• A1901 - iPhone X
• A1902 - iPhone X

What's Included:

• 1 x For iPhone X - High Frequency 2G Power Amplifier - PA_UHB_E - Qualcomm